Mosfet 200v

18N20 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

• Mosfet 200v 100a
• Mosfet 200v 40a
• Mosfet 200v 60a
• Mosfet 200v 300a
• Mosfet 200v 10a
• Mosfet 200 Watt Mosfet
• Mosfet 200v 200a

Наименование прибора: 18N20

Тип транзистора: MOSFET

IRFP260N Transistor - 200V, 50A, HEXFET MOSFET, IRFP260N pdf, IRFP260N pinout, IRFP260N equivalent, replacement, IRFP260N schematic, manual, data. IRFB 31N20D Power MOSFET N-channel TO-220AB 200 V 31 A. Item-No.: IRFB 31N20D. Delivery time: 4-9 business days.

Полярность: N

Максимальная рассеиваемая мощность (Pd): 110 W

Предельно допустимое напряжение сток-исток |Uds|: 200 V

Предельно допустимое напряжение затвор-исток |Ugs|: 30 V

Максимально допустимый постоянный ток стока |Id|: 18 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 21.1 ns

Выходная емкость (Cd): 81.2 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.16 Ohm

Тип корпуса: TO251TO252TO220

18N20 Datasheet (PDF)

0.1. php18n20e 1.pdf Size:53K _philips

Philips Semiconductors Product specification PowerMOS transistor PHP18N20E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 200 Vavalanche energy capability, stable ID Drain current (DC) 18 Ablocking voltage, fast switching and Ptot Total power dis

0.2. stv18n20.pdf Size:311K _st

0.3. stb18n20.pdf Size:126K _st

STB18N20N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTB18N20 200 V

0.4. fdpf18n20ft g.pdf Size:601K _fairchild_semi

April 2013FDPF18N20FT_G N-Channel UniFETTM FRFET MOSFET 200 V, 18 A, 140 m Features DescriptionUniFETTM MOSFET is Fairchild Semiconductors high voltage RDS(on) = 129 m (Typ.) @ VGS = 10 V, ID = 9 AMOSFET family based on planar stripe and DMOS technology. This Low Gate Charge (Typ. 20 nC)MOSFET is tailored to reduce on-state resistance, and to provide bette

0.5. fqp18n20v2 fqpf18n20v2.pdf Size:793K _fairchild_semi

TMQFETFQP18N20V2/FQPF18N20V2200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 18A, 200V, RDS(on) = 0.14 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 20 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially tailore

0.6. fdpf18n20f.pdf Size:658K _fairchild_semi

September 2009UniFETTMFDP18N20F / FDPF18N20FTtmN-Channel MOSFET200V, 18A, 0.14Features Description RDS(on) = 0.12 ( Typ.)@ VGS = 10V, ID = 9A These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 20nC)stripe, DMOS technology. Low Crss ( Typ. 24pF)This advanced technology h

0.7. fqd18n20v2tf fqd18n20v2tm fqd18n20v2 fqu18n20v2.pdf Size:748K _fairchild_semi

January 2009QFETFQD18N20V2 / FQU18N20V2200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 15A, 200V, RDS(on) = 0.14 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 20 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been espec

0.8. fdd18n20lz.pdf Size:1212K _fairchild_semi

December 2013FDD18N20LZN-Channel UniFETTM MOSFET 200 V, 16 A, 125 mFeatures Description R DS(on) = 125 m (Typ.) @ VGS = 10 V, ID = 8 A UniFETTM MOSFET is Fairchild Semiconductors high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 30 nC)This MOSFET is tailored to reduce on-state resistance, and to Low CRSS (Typ. 25 pF)

0.9. fdp18n20f fdpf18n20f.pdf Size:685K _fairchild_semi

September 2009UniFETTMFDP18N20F / FDPF18N20FTtmN-Channel MOSFET200V, 18A, 0.14Features Description RDS(on) = 0.12 ( Typ.)@ VGS = 10V, ID = 9A These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 20nC)stripe, DMOS technology. Low Crss ( Typ. 24pF)This advanced technology h

0.10. ap18n20ags-hf.pdf Size:57K _ape

AP18N20AGS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS 200V Simple Drive Requirement RDS(ON) 170m Fast Switching Characteristic ID 18AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Grugge

0.11. ap18n20gh-hf ap18n20gj-hf.pdf Size:99K _ape

AP18N20GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Low On-resistance RDS(ON) 170m Fast Switching Characteristics ID 18A RoHS Compliant & Halogen-Free GSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching, D

0.12. ap18n20gs.pdf Size:172K _ape

AP18N20GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS 200V Simple Drive Requirement RDS(ON) 170m Fast Switching Characteristic ID 18AG RoHS Compliant & Halogen-FreeSDescriptionAP18N20 series are from Advanced Power innovated design andsilicon process technology to achieve the lowes

0.13. ap18n20gi.pdf Size:155K _ape

AP18N20GIRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS 200V Simple Drive Requirement RDS(ON) 170m Fast Switching Characteristic ID 18AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device design,GDlow on-resist

0.14. ap18n20gp-hf ap18n20gs-hf.pdf Size:102K _ape

AP18N20GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS 200V Simple Drive Requirement RDS(ON) 170m Fast Switching Characteristic ID 18AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching, GTO-22

0.15. mtn18n20fp.pdf Size:412K _cystek

Spec. No. : C840FP Issued Date : 2012.03.30 CYStech Electronics Corp.Revised Date : Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFETBVDSS : 200V RDSON(TYP) : 80m MTN18N20FP ID : 18A Description The MTN18N20FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance a

0.16. 18n20.pdf Size:1994K _goford

GOFORD18N20Description Features VDSS RDS(ON) ID @10V (typ) 0.136 18A 200V Fast switching 100% avalanche tested TO-251TO-252 Improved dv/dt capability Application DC-DC & DC-AC Converters for telecom, industrial and consumer environment Uninterruptible Power Supply (UPS) Switch Mode Low Power Supplies Industrial Actuators

0.17. 18n20a.pdf Size:1814K _goford

GOFORD18N20ADescription Features VDSS RDS(ON) ID @10V (typ) 0.136 18A200V Fast switching TO-251TO-252 100% avalanche tested Improved dv/dt capability Application DC-DC & DC-AC Converters for telecom, industrial and consumer environment Uninterruptible Power Supply (UPS) Switch Mode Low Power Supplies Industrial Actuators

0.18. cm18n20.pdf Size:122K _jdsemi

RC1N0M82 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 200V N-Channel VDMOS RoHS 12 3TO-220A 4

0.19. fir18n20g.pdf Size:1726K _first_silicon

FIR18N20GN-Channel Enhancement Mode Power MosfetPIN Connection TO-220DescriptionThe FIR18N20G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =18A RDS(ON)

0.20. wfp18n20.pdf Size:556K _winsemi

WFP18N20WFP18N20WFP18N20WFP18N20Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 18A,200V,R (Max 0.18)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 40nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produce

0.21. ctm18n20.pdf Size:171K _crownpo

CTM18N20Crownpo TechnologyPower MOSFETGeneral DescriptionFeatures.This Power MOSFET is designed for low voltage, highSilicon Gate for Fast Switching Speeds.speed power switching applications such as switchingLow R to Minimize On-Losses. Specified at ElevatedDS(on)regulators, converters, solenoid and relay drivers.Temperature.Rugged SOA is Power Dissipation Limi

0.22. hy18n20t.pdf Size:214K _hy

Mosfet 200v 100a

HY18N20T 200V / 18A200V, RDS(ON)=92mW@VGS=10V, ID=10AN-Channel Enhancement Mode MOSFETFeaturesTO-220AB Low On-State Resistance Excellent Gate Charge x RDS(ON) Product ( FOM ) Fully Characterized Avalanche Voltage and Current Specially Desigened for DC-DC Converter, Off-line UPS, Automotive System, Solenoid and Motor ControlDrain 2 In compliance with E

0.23. hy18n20d.pdf Size:213K _hy

HY18N20D200V / 18A200V, RDS(ON)=92mW@VGS=10V, ID=10AN-Channel Enhancement Mode MOSFETFeaturesTO-252 Low On-State Resistance Excellent Gate Charge x RDS(ON) Product ( FOM ) Fully Characterized Avalanche Voltage and Current Specially Desigened for DC-DC Converter, Off-line UPS, Automotive System, Solenoid and Motor ControlDrain 2 In compliance with EU R

0.24. wvm18n20.pdf Size:23K _shaanxi

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM18N20(IRF240)Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power s

0.25. tmp18n20z tmpf18n20z.pdf Size:591K _trinnotech

TMP18N20Z(G)/TMPF18N20Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on)MAX 100% avalanche tested 200V 18A

0.26. tmd18n20z tmu18n20z.pdf Size:437K _trinnotech

TMD18N20Z(G)/TMU18N20Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) MAX 100% avalanche tested 200V 18A

0.27. cs18n20bf cs18n20bp.pdf Size:784K _convert

nvertSuzhou Convert Semiconductor Co ., Ltd.CS18N20BF,CS18N20BP200V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS18N20BF TO-220F CS18N20BF

0.28. cs18n20bf cs18n20bp cs18n20bb.pdf Size:484K _convert

nvertSuzhou Convert Semiconductor Co ., Ltd.CS18N20BF,CS18N20BP,CS18N20BB200V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS18N20BF TO-220F

0.29. 18n20.pdf Size:282K _inchange_semiconductor

Mosfet 200v 40a

isc N-Channel MOSFET Transistor 18N20FEATURESDrain Current I = 18A@ T =25D CStatic drain-source on-resistance:RDS(on) 0.092Fast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitch regulatorsSwitching converters, motor drivers, relay driversABSOLUTE MAXIMUM RAT

Mosfet 200v 60a

Другие MOSFET... 8205A, 8205B, G3205, G1010, G3710, 5N20A, 630A, 640, IRF740, 18N20A, 2N25, 3N25, 740, 840, 16N50F, 13N50F, 20N50.

Список транзисторов

Mosfet 200v 300a

Обновления

MOSFET: CEZ3R04 | CEZ3P08 | CES2322 | CEB93A3 | CEF9060N | CEB6086 | CEN2321A | CEN2307A | CEM9288 | CEM6056L | CEM4052 | CEM2192 | CEU25N02 | CED25N02 | CEU20N02 | CED20N02

Mosfet 200v 10a

Mosfet 200 Watt Mosfet

Mosfet 200v 200a

Номер произв	IRFB31N20
Описание	Power MOSFET(Vdss=200V/ Rds(on)max=0.082ohm/ Id=31A)
Производители	International Rectifier
логотип
1Page No Preview Available ! PD- 93805B IRFS31N20D HEXFET® Power MOSFET l High frequency DC-DC converters 200V 0.082Ω 31A l Low Gate-to-Drain Charge to Reduce l Fully Characterized Capacitance Including App. Note AN1001) and Current IRFB31N20D TO-262 Absolute Maximum Ratings ID @ TC = 100°C PD @TA = 25°C VGS TJ Parameter Continuous Drain Current, VGS @ 10V Power Dissipation ‡ Linear Derating Factor Peak Diode Recovery dv/dt ƒ Storage Temperature Range Mounting torqe, 6-32 or M3 screw† 31 124 200 ± 30 -55 to + 175 10 lbf•in (1.1N•m) A W/°C V/ns Typical SMPS Topologies Notes  through ‡ are on page 11 1 No Preview Available ! Static @ TJ = 25°C (unless otherwise specified) Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage RDS(on) VGS(th) IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Reverse Leakage ––– 3.0 ––– ––– 0.25 ––– ––– 5.5 ––– 250 ––– -100 V/°C V nA Reference to 25°C, ID = 1mA VDS = VGS, ID = 250µA VDS = 160V, VGS = 0V, TJ = 150°C VGS = -30V Parameter Conditions Qg Total Gate Charge Qgd Gate-to-Drain ('Miller') Charge Turn-On Delay Time td(off) tf Fall Time Coss Output Capacitance Coss Output Capacitance Coss eff. Effective Output Capacitance 17 ––– ––– S VDS = 50V, ID = 18A ID = 18A ––– 33 49 VGS = 10V, „ VDD = 100V ––– 26 ––– ––– 10 ––– ––– 2370 ––– ––– 390 ––– ––– 78 ––– pF ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– 170 ––– VGS = 0V, VDS = 0V to 160V EAS Single Pulse Avalanche Energy‚ EAR Repetitive Avalanche Energy Typ. ––– Max. 18 Units A Parameter Max. RθJC RθCS RθJA RθJA Diode Characteristics 0.50 ––– ––– °C/W 40 Min. Typ. Max. Units IS Continuous Source Current ISM Pulsed Source Current MOSFET symbol A showing the ––– ––– 124 G S trr Reverse Recovery Time ton Forward Turn-On Time ––– ––– 1.3 V TJ = 25°C, IS = 18A, VGS = 0V „ ––– 1.7 2.6 µC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) No Preview Available ! 1000 VGS 15V 10V 7.0V 6.0V 10 0.1 20µs PULSE WIDTH 1 10 100 1000 VGS 15V 10V 7.0V 6.0V 10 20µs PULSE WIDTH 1 VDS, Drain-to-Source Voltage (V) 1000 TJ = 175 ° C TJ = 25° C 0.1 V DS= 50V 6 7 8 9 10 11 www.irf.com 2.5 1.5 0.5 0.0 TJ, Junction Temperature ( °C) Vs. Temperature
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